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Author Hung-Wei Tseng ♦ Grupp, L. ♦ Swanson, S.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2011
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Ash ♦ Bit error rate ♦ Programming ♦ Encoding ♦ Reliability ♦ Semiconductor device measurement ♦ power loss ♦ flash memory ♦ power failure
Abstract Flash memory is quickly becoming a common component in computer systems ranging from music players to mission-critical server systems. As flash plays a more important role, data integrity in flash memories becomes a critical question. This paper examines one aspect of that data integrity by measuring the types of errors that occur when power fails during a flash memory operation. Our findings demonstrate that power failure can lead to several non-intuitive behaviors. We find that increasing the time before power failure does not always reduce error rates and that a power failure during a program operation can corrupt data that a previous, successful program operation wrote to the device. Our data also show that interrupted program operations leave data more susceptible to read disturb and increase the probability that the programmed data will decay over time. Finally, we show that incomplete erase operations make future program operations to the same block unreliable.
Description Author affiliation: The Department of Computer Science and Engineering, University of California, SanDiego, USA (Hung-Wei Tseng; Grupp, L.; Swanson, S.)
ISBN 9781450306362
ISSN 85644924
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2011-06-05
Publisher Place USA
Rights Holder Association for Computing Machinery, Inc. (ACM)
e-ISBN 9781450306362
Size (in Bytes) 425.12 kB
Page Count 6
Starting Page 35
Ending Page 40

Source: IEEE Xplore Digital Library