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Author Redono, L.M. ♦ Silva, J.F. ♦ Tavares, P. ♦ Margato, E.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2005
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Silicon ♦ Voltage ♦ Pulse generation ♦ Pulse circuits ♦ Frequency ♦ Circuit topology ♦ Power generation ♦ Power semiconductor switches ♦ Solid state circuits ♦ Inductors
Abstract This paper discusses the operation of a fully integrated solid-state Marx generator circuit, which has been developed for high-frequency (kHz), high-voltage (kV) applications needing rectangular pulses. The conventional Marx generator, used for high-voltage pulsed applications, uses inductors, or resistors, to supply the charging capacitors voltage, which has the disadvantages of size, power loss and frequency limitation. The proposed circuit takes advantage of the intensive use of power semiconductor switches, replacing the passive elements in the conventional circuit, to increase the performance, strongly reducing losses and increasing the pulse repetition frequency. Also, the proposed topology enables the use of typical half-bridge semiconductor structures, while ensuring that the maximum voltage blocked by the semiconductors is the voltage of each capacitor (i.e. the power supply voltage), even with mismatches in the synchronized switching, and with fault conditions. A laboratory prototype with five stages, 5 kW peak power, of this all silicon Marx generator circuit, was constructed using 1200 V IGBTs and diodes, operating with 1000 V d-c input voltage and 10 kHz frequency, giving 5 kV pulses, with 10 mus width and 50 ns rise time
Description Author affiliation: Instituto Superior de Engenharia de Lisboa, Centro de Fisica da Univ. de Lisboa, Lisbon (Redono, L.M.)
ISBN 0780390334
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2005-06-16
Publisher Place Brazil
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 432.73 kB
Page Count 5
Starting Page 1170
Ending Page 1174

Source: IEEE Xplore Digital Library