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Author Fong, S.W. ♦ Jeyasingh, R. ♦ Asheghi, M. ♦ Goodson, K.E. ♦ Wong, H.-S.P.
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©2014
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Temperature measurement ♦ Thermal resistance ♦ Heating ♦ Electrical resistance measurement ♦ Phase change materials ♦ Thermal conductivity ♦ Micro -Thermal Stage ♦ Phase Change Memory ♦ Thermal Circuit ♦ COMSOL
Abstract Recent progress using a micro-thermal stage (MTS) allowed the control the temperature of microstructures with sub-μs time scales. This approach was applied to phase-change memory (PCM) cells to measure thermal material and device properties. In this work, we use the change in MTS thermal resistance to predict changes in the thermal conductivity or thickness of the nearby phase-change layer (PCL). More generally, we show that the MTS can be placed in-situ of a complicated system to measure the thermal properties of a single changing layer. Electrical measurements of the MTS are performed on several different structures with different PCL thicknesses including 35, 70, and 100 nm thick $Ge_{2}Sb_{2}Te_{5}$ (GST) films, a different phase-change material, and no PCL. Simulations establish the expected relationship between the MTS temperature for different input PCL thermal properties. The simulation approach is then scaled to match the experimental data and predicts the temperature in the PCL for different PCL thermal properties. Additionally, an analytical thermal circuit model is developed to describe the thermal profile of the system. The calibrated simulation and analytical models are thus able to determine thermal properties of the buried PCL by making purely electrical measurements of the MTS.
Description Author affiliation: Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA (Fong, S.W.; Jeyasingh, R.; Wong, H.-S.P.) || Dept. of Mech. Eng., Stanford Univ., Stanford, CA, USA (Asheghi, M.; Goodson, K.E.)
ISBN 9781479952670
ISSN 10879870
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research ♦ Reading
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-05-27
Publisher Place USA
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Size (in Bytes) 895.47 kB
Page Count 6
Starting Page 744
Ending Page 749


Source: IEEE Xplore Digital Library