|Author||Kushniruk, V. F. ♦ Ryndina, E. Z. ♦ Solov'ev, S. M. ♦ Chuburkova, I. I.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||INSTRUMENTATION ♦ ALPHA SPECTROMETERS ♦ CURRENTS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRIC POTENTIAL ♦ FILMS ♦ FISSION PRODUCTS ♦ HOMOGENEOUS REACTORS ♦ MEASURED VALUES ♦ NOISE ♦ OPERATION ♦ POWER ♦ RADIATION DETECTORS ♦ RESOLUTION ♦ SEMICONDUCTORS ♦ SENSITIVITY ♦ SIGNALS ♦ SILICON ♦ THICKNESS|
|Abstract||While the preparation of n--Si type surface-barrier detectors with a specific resistivity of 150 ohm cm is relatively easy, as long as their area is small, the large reverse currents and inhomogeneities in the Si layers prevented the fabrication of detectors with sufficiently large resolving power. However, it was established that an extended lifetime improw'es the propei'ties of the detectors. A detector fabricated during February 1962 in Dubna for recording alpha particles and for measuring fission fragment energies and having a resolution of 8 to 14%, was examined 1 and 6 months after completion. It was found that during the intervening time period the reverse current shift decreased by an order of magnitude while the operating voltage increased from 10 to 15 to 150 v; this resulted in a 50-fold improvement in the signal-to-noise ratio and in the resolution of the instrument, allowing the detector to be used not only for recording alpha particles but also for spectrometric measurements. Use of Si with a specific resistivity of 900 to 10(10 ohm cm allowed a 100- mu deep sensitive layer with a resolution of 100 kev to be obtained on a 3-cm/sup 2/ surface. (TTT)|
|Learning Resource Type||Article|
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