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Author Vasil'ev, D. A. ♦ Vasil'eva, N. V. ♦ Spassky, D. A. ♦ Omelkov, S. I. ♦ Khakhalin, A. V. ♦ Plotnichenko, V. G.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM OXIDES ♦ BORON OXIDES ♦ CATHODOLUMINESCENCE ♦ CERIUM IONS ♦ CERIUM OXIDES ♦ CONCENTRATION RATIO ♦ CRYSTAL GROWTH ♦ GADOLINIUM OXIDES ♦ LEAD OXIDES ♦ LIQUID PHASE EPITAXY ♦ MEV RANGE ♦ MONOCRYSTALS ♦ PHOTOLUMINESCENCE ♦ PHOTONS ♦ SCINTILLATIONS ♦ THIN FILMS
Abstract The optical absorption and photoluminescence properties of cerium-activated (Pb,Gd){sub 3}(Al,Ga){sub 5}O{sub 12} epitaxial films are studied. The films are grown on single-crystal (111)-oriented Gd{sub 3}Ga{sub 5}O{sub 12} substrates by liquid-phase epitaxy from supercooled PbO – B{sub 2}O{sub 3} melt solutions at different concentrations of gadolinium, cerium, and aluminium oxides in the charge. The photoluminescence band of Ce{sup 3+} ions is shown to peak at 532 nm. The highest cathodoluminescence yield of about 51500 photons MeV{sup -1} at a decay time of the slow component of 61.0 ns (light yield fraction 68%) is found for the Pb{sub 0.01}Ce{sub 0.03}Gd{sub 2.96}Al{sub 3.14}Ga{sub 1.86}O{sub 12} film, grown from melt solution with gadolinium oxide, cerium oxide, and aluminium oxide concentrations of 0.4, 0.2, and 4.5 mol % in the charge, respectively. Epitaxial films with these spectroscopic characteristics are promising for application in scintillation screens. (fluorescence and photogeneration)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2017-10-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 47
Issue Number 10


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