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Author Park, Dae-Gyu ♦ Cho, Heung-Jae ♦ Lim, Kwan-Yong ♦ Lim, Chan ♦ Yeo, In-Seok ♦ Roh, Jae-Sung ♦ Park, Jin Won
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ BREAKDOWN ♦ CAPACITORS ♦ CHEMICAL VAPOR DEPOSITION ♦ CROSS SECTIONS ♦ DIELECTRIC MATERIALS ♦ ELECTRIC FIELDS ♦ LEAKAGE CURRENT ♦ OXIDES
Abstract We report interface and dielectric reliability characteristics of n{sup +} polycrystalline-silicon (poly-Si)/Al{sub 2}O{sub 3}/Si metal{endash}oxide{endash}semiconductor (MOS) capacitors. Al{sub 2}O{sub 3} films were prepared by atomic layer chemical vapor deposition using Al(CH{sub 3}){sub 3} and H{sub 2}O vapor. Interface state density (D{sub it}) and dielectric reliability properties of n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS structures were examined by capacitance{endash}voltage, conductance, current{endash}voltage, and time-dependent dielectric breakdown measurements. The D{sub it} of the n{sup +} poly-Si/Al{sub 2}O{sub 3}/Si MOS system near the Si midgap is approximately 8{times}10{sup 10}eV{sup {minus}1}cm{sup {minus}2} as determined by the conductance method. Frequency dispersion as small as {similar_to}20 mV and hysteresis of {similar_to}15 mV were attained under the electric field of {+-}8 MV/cm. The gate leakage current of {similar_to}36 Aa effective thickness Al{sub 2}O{sub 3} dielectric measured at the gate voltage of {minus}2.5 V is {similar_to}{minus}5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO{sub 2}). Time-dependent dielectric breakdown data of Al{sub 2}O{sub 3}/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al{sub 2}O{sub 3} gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al{sub 2}O{sub 3}/Si junction are discussed. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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