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Author Tsutsui, Kazuhiro ♦ Matsubayashi, Daisuke ♦ Ishihara, Noritaka ♦ Takasu, Takako ♦ Matsuda, Shinpei ♦ Yamazaki, Shunpei
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COULOMB SCATTERING ♦ ELECTRON MOBILITY ♦ INDIUM IONS ♦ POTENTIALS ♦ THIN FILMS ♦ VALENCE ♦ ZINC OXIDES
Abstract The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-28
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 26


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