Thumbnail
Access Restriction
Open

Author Lee, Hsin-Ying ♦ Chou, Ying-Hung ♦ Lee, Ching-Ting ♦ Yeh, Wen-Yung ♦ Chu, Mu-Tao
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ NANOSCIENCE AND NANOTECHNOLOGY ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM ♦ ANNEALING ♦ DEPOSITION ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRON MOBILITY ♦ GALLIUM NITRIDES ♦ LIGHT EMITTING DIODES ♦ LIGHT SCATTERING ♦ NANOSTRUCTURES ♦ SEMICONDUCTOR MATERIALS ♦ SOLID CLUSTERS ♦ SPUTTERING ♦ THIN FILMS ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ ZINC OXIDES ♦ CHALCOGENIDES ♦ ELECTRICAL PROPERTIES ♦ ELECTRON MICROSCOPY ♦ ELEMENTS ♦ FILMS ♦ GALLIUM COMPOUNDS ♦ HEAT TREATMENTS ♦ MATERIALS ♦ METALS ♦ MICROSCOPY ♦ MOBILITY ♦ NITRIDES ♦ NITROGEN COMPOUNDS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PARTICLE MOBILITY ♦ PHYSICAL PROPERTIES ♦ PNICTIDES ♦ SCATTERING ♦ SEMICONDUCTOR DEVICES ♦ SEMICONDUCTOR DIODES ♦ ZINC COMPOUNDS
Abstract Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-01-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 1


Open content in new tab

   Open content in new tab