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Author Ohta, Hiroyuki ♦ Hori, Masaru ♦ Goto, Toshio
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ PARTICLE ACCELERATORS ♦ ABSORPTION SPECTROSCOPY ♦ ATOMIC FORCE MICROSCOPY ♦ CHEMICAL VAPOR DEPOSITION ♦ DIELECTRIC MATERIALS ♦ ELECTRON CYCLOTRON-RESONANCE ♦ INTEGRATED CIRCUITS ♦ LEAKAGE CURRENT ♦ MASS SPECTROSCOPY ♦ PHOTOELECTRON SPECTROSCOPY ♦ PLASMA ♦ SILICON NITRIDES
Abstract Ultrathin fluorinated silicon nitride (SiN{sub x}) films of 4 nm in thickness were formed on a Si substrate at 350{sup o}C in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH{sub 3}/SiF{sub 4}) gases. Ultrathin fluorinated SiN{sub x} film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO{sub 2} of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D{sub it}=4 x 10{sup 11}cm{sup -2}) in the capacitance--voltage characteristics. The film structures and the surface reactions for the fluorinated SiN{sub x} film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN{sub x} films was found to be a key factor in the formation of fluorinated SiN{sub x} films of high quality at low temperatures. Fluorinated SiN{sub x} is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 90
Issue Number 4


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