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Author Kim, Gil-Ho ♦ Ritchie, D. A. ♦ Liang, C. -T. ♦ Lian, G. D. ♦ Yuan, J. ♦ Pepper, M. ♦ Brown, L. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ELECTRONS ♦ GASES ♦ PHYSICS ♦ ROUGHNESS ♦ SCATTERING ♦ TRANSPORT
Abstract We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [{bar 1}10] and [110] directions. The mobility in the [{bar 1}10] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 24


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