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Author Lee, J. W. ♦ Hong, J. ♦ Lambers, E. S. ♦ Abernathy, C. R. ♦ Pearton, S. J. ♦ Hobson, W. S. ♦ Ren, F.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SOLAR ENERGY ♦ GALLIUM ARSENIDES ♦ ETCHING ♦ ALUMINIUM ARSENIDES ♦ GALLIUM PHOSPHIDES ♦ CHLORINE ♦ ADDITIVES ♦ ARGON ♦ NITROGEN ♦ HYDROGEN ♦ MASKING ♦ PARAMETRIC ANALYSIS ♦ SEMICONDUCTOR MATERIALS ♦ SOLAR CELLS
Abstract Cl{sub 2}-based plasmas for etching GaAs, AlGaAs, and GaP have been examined as a function of gas additive (Ar, N{sub 2}, or H{sub 2}), radio frequency (RF) and microwave power, plasma composition, mask material, and process pressure. In a load-locked reactor, smooth etched surface morphologies were obtained over basically all conditions investigated, with typical root-mean-square roughness of {le}1.5 nm measured by atomic force microscopy. The etch rates for all three materials increase with RF power (ion energy), microwave power (ion current), Cl{sub 2} percentage, and pressure, with controlled rates of {approximately}0.4 {micro}m/min at a condition of 2Cl{sub 2}/13Ar, 850 W microwave power, 1.5 mTorr, and 100 to 150 W of RF power. Operating under electron cyclotron resonance conditions where the ion density is {ge}5 {times} 10{sup 11} cm{sup {minus}3} (measured by microwave reflection interferometry) produces rapid degradation of photoresist, and more robust mask materials such as SiN{sub x}, SiO{sub 2}, or W are necessary.
ISSN 00134651
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-06-01
Publisher Place United States
Journal Journal of the Electrochemical Society
Volume Number 143
Issue Number 6


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