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Author Lorenzi, P. ♦ Rao, R. ♦ Irrera, F. ♦ Suñé, J. ♦ Miranda, E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CURRENTS ♦ DIELECTRIC MATERIALS ♦ ELECTRIC POTENTIAL ♦ EQUIVALENT CIRCUITS ♦ FILAMENTS ♦ FILMS ♦ HAFNIUM OXIDES ♦ METALS
Abstract According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-14
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 11


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