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Author Zhu, H. J. ♦ Ramsteiner, M. ♦ Kostial, H. ♦ Wassermeier, M. ♦ Schonherr, H. -P. ♦ Ploog, K. H.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ EFFICIENCY ♦ ELECTROLUMINESCENCE ♦ ELECTRONS ♦ LIGHT EMITTING DIODES ♦ POLARIZATION ♦ SPIN ♦ TUNNELING
Abstract Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2% . The underlying injection mechanism is explained in terms of a tunneling process.
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-07-02
Publisher Place United States
Journal Physical Review Letters
Volume Number 87
Issue Number 1


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