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Author Bondarev, Vadim Yu ♦ Kozlovskii, Vladimir I. ♦ Popov, Yurii M. ♦ Skasyrsky, Yan K. ♦ Krysa, Andrei B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM PHOSPHIDES ♦ ELECTRON BEAM PUMPING ♦ ELECTRON BEAMS ♦ ELECTRON SCANNING ♦ GAIN ♦ GALLIUM PHOSPHIDES ♦ INDIUM PHOSPHIDES ♦ LASERS ♦ PERIODICITY ♦ QUANTUM WELLS ♦ RESONANCE ♦ RESONATORS ♦ VAPOR PHASE EPITAXY ♦ ALUMINIUM COMPOUNDS ♦ AMPLIFICATION ♦ BEAMS ♦ CRYSTAL GROWTH METHODS ♦ ELECTRICAL PUMPING ♦ ELECTRONIC EQUIPMENT ♦ EPITAXY ♦ EQUIPMENT ♦ GALLIUM COMPOUNDS ♦ INDIUM COMPOUNDS ♦ LEPTON BEAMS ♦ NANOSTRUCTURES ♦ PARTICLE BEAMS ♦ PHOSPHIDES ♦ PHOSPHORUS COMPOUNDS ♦ PNICTIDES ♦ PUMPING ♦ VARIATIONS
Abstract The metalorganic vapour phase epitaxy was used for growing GaInP/AlGaInP periodic structures with 25 quantum wells. The active elements based on these structures were prepared for a laser longitudinally pumped by a scanning electron beam. The structure is intended for resonance periodic gain in the case when the quantum wells are at the antinodes of the resonator mode corresponding to the peak of the gain line. The effect of the structural inhomogeneities over the thickness (up to 5%) on the lasing parameters is studied, as well as the temperature detuning from the resonant gain conditions. It is shown that the period of the structure must differ from the optimal value by no more than 0.7% for attaining a 10% uniformity in the lasing threshold along the active element. (lasers)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2004-10-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 34
Issue Number 10


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