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Author Shun Tung Yen ♦ Chien-Ping Lee
Sponsorship IEEE Lasers and Electro-Optics Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1965
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Quantum well lasers ♦ Laser modes ♦ Photonic band gap ♦ Semiconductor lasers ♦ Threshold current ♦ Laser theory ♦ Absorption ♦ Optical materials ♦ Optical mixing ♦ Optical refraction
Abstract GaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized. The valence band structure of quantum wells is obtained by evaluating the 6/spl times/6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital spilt-off hole bands. The effect of optical transition from/to continuum states not confined to the quantum well is studied. It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current. This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain. The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, it can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers. The calculated threshold current agrees well with the observation. The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result.
Description Author affiliation :: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
ISSN 00189197
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-03-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 33
Issue Number 3
Size (in Bytes) 542.39 kB
Page Count 14
Starting Page 443
Ending Page 456


Source: IEEE Xplore Digital Library