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Author Min, K. S. ♦ Shcheglov, K. V. ♦ Yang, C. M. ♦ Atwater, H. A. ♦ Brongersma, M. L. ♦ Polman, A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ EMISSION SPECTRA ♦ SILICON OXIDES ♦ VISIBLE RADIATION ♦ ION BEAMS ♦ EXCITONS ♦ PHOTOLUMINESCENCE ♦ DEFECTS ♦ HYDROGEN ADDITIONS ♦ RED SHIFT ♦ SYNTHESIS
Abstract Two sources of room temperature visible luminescence are identified from SiO{sub 2} films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe{sup +}-implanted SiO{sub 2} films and SiO{sub 2} films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO{sub 2} matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals {open_quote}{open_quote}redshifts{close_quote}{close_quote} as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures ({lt}500{degree}C), the intensity of nanocrystal luminescence increases by more than a factor of 10. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-09-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 14


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