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Author Frammelsberger, W. ♦ Lechner, P. ♦ Geyer, R. ♦ Kniffler, N.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ SILICON SOLAR CELLS ♦ PERFORMANCE ♦ CRYSTAL DEFECTS ♦ ENERGY GAP ♦ HYDROGENATION ♦ PHOTOCURRENTS ♦ SAMPLE PREPARATION ♦ CHEMICAL REACTIONS ♦ CRYSTAL STRUCTURE ♦ CURRENTS ♦ DIRECT ENERGY CONVERTERS ♦ ELECTRIC CURRENTS ♦ EQUIPMENT ♦ PHOTOELECTRIC CELLS ♦ PHOTOVOLTAIC CELLS ♦ SOLAR CELLS ♦ SOLAR EQUIPMENT 140501* -- Solar Energy Conversion-- Photovoltaic Conversion
Abstract We used the constant photocurrent method to characterize {ital a}-Si:H based {ital pin} cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity {alpha}{sub {ital D}} (subbandgap optical absorption constant). We show that the changes in the {ital i} layer due to the creation of metastable defects after light soaking or current injection{minus}characterized by {alpha}{sub {ital D}}{minus}directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify {alpha}{sub {ital D}} in terms of a defect density of states.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1991-06-10
Publisher Place United States
Journal Applied Physics Letters
Volume Number 58
Issue Number 23


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