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Author Langhanki, B. ♦ Greulich-Weber, S. ♦ Spaeth, J. -M. ♦ Michel, J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANISOTROPY ♦ DEFECTS ♦ DETECTION ♦ ELECTRON SPIN RESONANCE ♦ PHYSICS ♦ SILICON ♦ SYMMETRY
Abstract Using electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO{sub 2} interface and in regions several {mu}m below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the experimental detection of the g-factor anisotropy of two centers, labeled P{sub ba} and P{sub bb}. Both appear with a [111]-oriented, trigonally symmetric g-tensor with g{sub {parallel}}=2.0008/g{sub {perpendicular}}=2.0098 and g{sub {parallel}}=1.9974/g{sub {perpendicular}}=2.0160, respectively ({Delta}g={+-}0.0004). The data of the P{sub ba} center are very similar to those of the well known P{sub b0} center occurring on (100) oriented silicon. The location of the center which is significantly below the (100)Si/SiO{sub 2} interface is discussed. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 23


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