Thumbnail
Access Restriction
Open

Author King, Matthew R. ♦ El-Hinnawy, Nabil ♦ Salmon, Mike ♦ Gu, Jitty ♦ Wagner, Brian P. ♦ Jones, Evan B. ♦ Howell, Robert S. ♦ Nichols, Doyle T. ♦ Young, Robert M. ♦ Borodulin, Pavel
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ AMORPHOUS STATE ♦ CRYSTALLIZATION ♦ GERMANIUM TELLURIDES ♦ PHASE CHANGE MATERIALS ♦ POLYCRYSTALS ♦ PULSES ♦ SWITCHES ♦ THIN FILMS ♦ TRANSMISSION ELECTRON MICROSCOPY
Abstract Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 9


Open content in new tab

   Open content in new tab