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Author Lamprecht, M. ♦ Grund, C. ♦ Neuschl, B. ♦ Thonke, K. ♦ Bryan, Z. ♦ Collazo, R. ♦ Sitar, Z.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM ♦ ALUMINIUM NITRIDES ♦ CRYSTALS ♦ DECAY ♦ DEFECTS ♦ DISSOCIATION ♦ DISSOCIATION ENERGY ♦ ELECTRON SPIN RESONANCE ♦ ELECTRONS ♦ EXCITATION ♦ MEV RANGE 10-100 ♦ PARAMAGNETISM ♦ PHOTOLUMINESCENCE ♦ QUENCHING ♦ RECOMBINATION ♦ SILICON ♦ SPECTROSCOPY ♦ TEMPERATURE RANGE 0065-0273 K ♦ TIME RESOLUTION
Abstract We report on a defect related luminescence band at 2.4 eV in aluminum nitride bulk crystals, for which we find strong indications to be related to silicon DX centers. Time resolved photoluminescence spectroscopy using a sub-bandgap excitation reveals two different recombination processes with very long decay times of 13 ms and 153 ms at low temperature. Based on the results of temperature and excitation dependent photoluminescence experiments, the process with the shorter lifetime is assigned to a donor-acceptor pair transition involving the shallow silicon donor state, which can be emptied with a thermal dissociation energy of 65 meV. The slower process with a thermal quenching energy of 15 meV is assigned to the slightly deeper Si DX state known from electron paramagnetic resonance experiments, which is transferred back to the shallow donor state.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 15


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