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Author Glembocki, O. J. ♦ Glaser, E. R. ♦ Gaskill, D. K.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM ARSENIDES ♦ CRYSTALLIZATION ♦ ANNEALING ♦ FILMS ♦ PHOTOLUMINESCENCE ♦ RAMAN SPECTROSCOPY ♦ X-RAY DIFFRACTION
Abstract The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260{degrees}C are presented. The layers, amorphous as grown, became crystalline after annealing. The crystallization was documented by several characterization techniques including photo-reflectance, Raman spectroscopy, photoluminescence, transmission electron microscopy, and double-crystal x-ray diffraction. The n-type conductivity of the annealed films was exploited for the construction of a diode structure. 7 refs., 3 figs.
ISSN 03615235
Educational Use Research
Learning Resource Type Article
Publisher Date 1993-12-01
Publisher Place United States
Journal Journal of Electronic Materials
Volume Number 22
Issue Number 12


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