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Author Klingsporn, M. ♦ Costina, I. ♦ Kirner, S. ♦ Stannowski, B. ♦ Villringer, C. ♦ Abou-Ras, D. ♦ Lehmann, M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANISOTROPY ♦ CHEMICAL VAPOR DEPOSITION ♦ CRYSTALS ♦ DOPED MATERIALS ♦ ELECTRON DIFFRACTION ♦ ELECTRONS ♦ ELLIPSOMETRY ♦ FILAMENTS ♦ LAYERS ♦ NANOSTRUCTURES ♦ OPTICAL PROPERTIES ♦ PLASMA ♦ PLASMONS ♦ RAMAN SPECTROSCOPY ♦ SILICON OXIDES ♦ SILICON SOLAR CELLS ♦ THIN FILMS ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract Nanocrystalline silicon suboxides (nc-SiO{sub x}) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO{sub 0.8}:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 22


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