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Author Shimosako, N. ♦ Inose, Y. ♦ Satoh, H. ♦ Kinjo, K. ♦ Nakaoka, T. ♦ Oto, T. ♦ Kishino, K. ♦ Ema, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIER DENSITY ♦ EFFICIENCY ♦ GALLIUM NITRIDES ♦ MOBILITY ♦ PHOTOLUMINESCENCE ♦ QUANTUM WELLS ♦ SPECTRA ♦ TAILINGS ♦ THIN FILMS
Abstract We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 17


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