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Author Kawakami, Naoya ♦ Lin, Chun-Liang ♦ Kawai, Maki ♦ Takagi, Noriaki ♦ Arafune, Ryuichi
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CRYSTALS ♦ DEPOSITS ♦ ELECTRONIC STRUCTURE ♦ ENERGY DEPENDENCE ♦ GEOMETRY ♦ INTERFERENCE ♦ SCANNING TUNNELING MICROSCOPY ♦ SPECTROSCOPY ♦ SURFACES ♦ THIN FILMS
Abstract The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-20
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 3


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