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Author Gaan, S. ♦ He, Guowei ♦ Feenstra, R. M. ♦ Walker, J. ♦ Towe, E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM ARSENIDES ♦ HETEROJUNCTIONS ♦ HOLES ♦ INDIUM ARSENIDES ♦ MOLECULAR BEAM EPITAXY ♦ QUANTUM DOTS ♦ SCANNING TUNNELING MICROSCOPY ♦ SEMICONDUCTOR MATERIALS ♦ SOLID CLUSTERS ♦ TUNNEL EFFECT ♦ TUNNELING ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ CRYSTAL GROWTH METHODS ♦ EPITAXY ♦ GALLIUM COMPOUNDS ♦ INDIUM COMPOUNDS ♦ MATERIALS ♦ MICROSCOPY ♦ NANOSTRUCTURES ♦ PNICTIDES ♦ SEMICONDUCTOR JUNCTIONS
Abstract InAs/GaAs quantum-dot (QD) heterostructures grown by molecular-beam epitaxy are studied using cross-sectional scanning tunneling microscopy and spectroscopy. Individual InAs QDs are resolved in the images. Tunneling spectra acquired 3-4 nm from the QDs show a peak located in the upper part of the GaAs band gap originating from the lowest electron confined state, together with a tail extending out from the valence band from hole confined states. A line-shape analysis is used to deduce the binding energies of the electron and hole QD states.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-09-20
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 12


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