Thumbnail
Access Restriction
Open

Author Yoshimura, Satoru ♦ Sugimoto, Satoshi ♦ Kiuchi, Masato
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ APPROXIMATIONS ♦ BEAM PRODUCTION ♦ DEPOSITION ♦ DEPOSITS ♦ FILMS ♦ ION BEAMS ♦ IONS ♦ IRRADIATION ♦ MASS ♦ RAMAN SPECTROSCOPY ♦ SILICON CARBIDES ♦ SUBSTRATES ♦ TEMPERATURE RANGE 0400-1000 K ♦ X-RAY DIFFRACTION
Abstract We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as a gas source. In this study, one of the fragment ions produced from HMD, SiCH{sub 4}{sup +}, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH{sub 4}{sup +} ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800 °C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated the occurrence of 3C-SiC deposition.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 10


Open content in new tab

   Open content in new tab