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Author Goetz, W. ♦ Johnson, N. M. ♦ Bour, D. P. ♦ McCluskey, M. D. ♦ Haller, E. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM NITRIDES ♦ VIBRATIONAL STATES ♦ DEUTERATION ♦ CRYSTAL DOPING ♦ INFRARED SPECTRA ♦ ABSORPTION SPECTRA ♦ CHEMICAL VAPOR DEPOSITION ♦ ELECTRIC CONDUCTIVITY ♦ LAYERS ♦ HYDROGEN ADDITIONS ♦ MANGANESE ADDITIONS ♦ DEFECT STATES ♦ ACCEPTORS ♦ EPITAXIAL LAYERS ♦ CVD
Abstract Local vibrational modes (LVMs) are reported for Mg-doped GaN grown by metalorganic chemical vapor deposition. Hetero-epitaxial layers of GaN:Mg, either as-grown, thermally activated, or deuterated, were investigated with low-temperature, Fourier-transform infrared absorption spectroscopy. The as-grown material, which was semi-insulating, exhibits a LVM at 3125 cm{sup {minus}1}. Thermal annealing increases the {ital p}-type conductivity, as established with Hall effect measurements, and proportionally reduces the intensity of this LVM. Deuteration of the activated material creates a LVM at 2321 cm{sup {minus}1}. The isotopic shift establishes the presence of hydrogen in the vibrating complex. The new LVMs are assigned to the stretch modes of the Mg{endash}H and Mg{endash}D complexes in GaN, with the vibrational frequencies indicative of a strong N{endash}H bond as recently proposed from total-energy calculations. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-12-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 24
Organization Lawrence Berkeley National Laboratory


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