Thumbnail
Access Restriction
Open

Author Mizuguchi, M. ♦ Sekiya, S. ♦ Takanashi, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CRYSTAL GROWTH ♦ CRYSTAL STRUCTURE ♦ DEPOSITION ♦ ELECTRON DIFFRACTION ♦ EPITAXY ♦ GOLD ♦ IRON ALLOYS ♦ LAYERS ♦ NANOSTRUCTURES ♦ NICKEL ALLOYS ♦ REFLECTION ♦ SUBSTRATES ♦ TEMPERATURE DEPENDENCE ♦ THIN FILMS ♦ ALLOYS ♦ COHERENT SCATTERING ♦ CRYSTAL GROWTH METHODS ♦ DIFFRACTION ♦ ELEMENTS ♦ FILMS ♦ METALS ♦ SCATTERING ♦ TRANSITION ELEMENT ALLOYS ♦ TRANSITION ELEMENTS
Abstract A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L1{sub 0}-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu{sub 3}). An FeNi thin film was epitaxially grown on the AuCu{sub 3} buffer layer by alternate monatomic layer deposition and the formation of an L1{sub 0}-FeNi ordered alloy was expected. The AuCu{sub 3} buffer layer is thus a promising candidate material for the growth of L1{sub 0}-FeNi thin films.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-05-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 9


Open content in new tab

   Open content in new tab