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Author Jayachandran, M. ♦ Paramasivam, M. ♦ Murali, K. R. ♦ Trivedi, D. C. ♦ Raghavan, M.
Source CSIR-Central Electrochemical Research Institute
Content type Text
File Format PDF
Copyright Year ©2001
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences ♦ Physical chemistry
Subject Keyword Electrochemical Materials Science
Abstract Porous structures were formed on p-Si wafers under various anodization conditions in ethanolic solutions containing aqueous hydrofluoric acid. The observed photoluminescence at room temperature depends on the anodization current density and the anodization time. Polyaniline (PA) was incorporated into the pores of the porous silicon (PSi) structure by in-situ electrodeposition. The porous structure formation has been confirmed using XRD and SEM studies. Currentvoltage (I-V) characteristics of the polyaniline filled PSi (PA PSi) structure showed the possibility of using PA as an ohmic contact for PSi based devices.
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2001-01-01
Journal PeerReviewed