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Author Murali, K. R. ♦ Sivaramamoorthy, K. ♦ Kottaisamy, M. ♦ Asathbahadur, S.
Source CSIR-Central Electrochemical Research Institute
Content type Text
Publisher Elsevier
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences ♦ Physical chemistry
Subject Keyword Electrochemical Materials Science
Abstract Thin CdSe films were electron beam evaporated. The CdSe powder synthesized in thel aboratory by a chemical method was used as source for the deposition of films. Clean glass and titanium substrates were used as substrates. The substrate temperature was varied in the range of 30–250 1C. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 1.65eV. The grain size was15–30nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noiseratio. The current voltage characteristics were linear.
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-01-01
Journal PeerReviewed