|Author||Josephprince, J. ♦ Ramamurthy, S. ♦ Subramanian, B. ♦ Sanjeeviraja, C. ♦ Jayachandran, M.|
|Source||CSIR-Central Electrochemical Research Institute|
|Subject Domain (in DDC)||Natural sciences & mathematics ♦ Chemistry & allied sciences ♦ Physical chemistry|
|Subject Keyword||Electrochemical Materials Science|
|Abstract||Indium oxide (In2O3) thin films have been prepared by spray pyrolysis using a very low concentration of indium precursor. The spray process parameters like the concentration of precursor in spray solution, ethanol+water, air-flow rate, substrate–nozzle distance and substrate temperature have been optimized for obtaining optically transparent, conducting and device-quality In2O3 films. The material properties are reported by studying the structural, electrical and optical properties of the In2O3 films prepared at a relatively lower temperature of 3801C. The surface morphology has been studied by scanning electron microscopy and atomic force microscopy. A possible film growth mechanism has been proposed for preparing device-quality In2O3 films using lower substrate temperatures. r 2002 Published by Elsevier Science B.V.|
|Education Level||UG and PG|
|Learning Resource Type||Article|
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