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Author Bemski, G.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword RADIATION EFFECTS ON MATERIALS ♦ CRYSTALS ♦ DEFECTS ♦ ELECTRONS ♦ HYPERFINE STRUCTURE ♦ OXYGEN ♦ RADIATION EFFECTS ♦ RESONANCE ♦ SEMICONDUCTORS ♦ SILICON ♦ SILICON 29 ♦ SPIN ♦ VACANCIES
Abstract Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 10/sup 18/ oxygen atoms per cm/sup 3/. The lines do not appear in floating zone crystals (< 10/sup 17/ oxygen per cm/sup 3/). The pattern is anisotropic with respect to the field orientation and can be fitted with a g tensor with components g/sub STA100!/ = 2.0029, g/sub STA110!/ = 2.0019, g/sub STA110!/ = 2.0096. Hyperfine structure due to interactions with Si/ sup 29/ nuclei is also observed. The hyperfine structure tensor exhibits a STA111! symmetry indicating that the electron is not centered on the silicon nucleus with which it is interacting. A model is suggested, consistent with the observed symmetries, according to which vacancies produced during irradiation diffuse to the distorted regions around oxygen atoms. (auth)
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-08-01
Publisher Department Bell Telephone Labs., Murray Hill, N.J.
Journal Journal of Applied Physics
Volume Number 30
Issue Number 8
Organization Bell Telephone Labs., Murray Hill, N.J.


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