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Author Park, Young-Bae ♦ Rhee, Shi-Woo
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ DIELECTRIC MATERIALS ♦ ELECTRON MICROSCOPES ♦ MICROSTRUCTURE ♦ NITRIDES ♦ SILICON ♦ SILICON NITRIDES ♦ STACKING FAULTS
Abstract Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si ({mu}c-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN{sub x}:H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si{endash}H contents in the SiN{sub x}:H surfaces, {mu}c-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN{sub x}:H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the {mu}c-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-07-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 90
Issue Number 1


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