Access Restriction

Author Lubenchenko, O.i. ♦ Lubenchenko, A.v. ♦ Krause, S. ♦ Ivanov, D.a. ♦ Batrakov, A.a. ♦ Pavolotsky, A.b. ♦ Shurkaeva, I.v.
Source Directory of Open Access Journals (DOAJ)
Content type Text
Publisher EDP Sciences
File Format PDF
Date Created 2016-12-15
Copyright Year ©2017
Language English
Subject Domain (in LCC) QC1-999
Subject Keyword Science ♦ Physics
Abstract Layer chemical and phase profiling of niobium nitride thin films on a silicon substrate oxidized on air was performed with the help of a method designed by us. The method includes: a new method of background subtraction of multiple inelastically scattered photoelectrons considering depth inhomogeneity of electron inelastic scattering; a new method of photoelectron line decomposition into component peaks considering physical nature of different decomposition parameters; joint solution of the background subtraction and photoelectron line decomposition problems; control of line decomposition accuracy with the help of a suggested performance criterion; calculation of layer thicknesses for a multilayer target using a simple formula.
ISSN 2100014X
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Learning Resource Type Article
Publisher Date 2017-01-01
e-ISSN 2100014X
Journal EPJ Web of Conferences
Volume Number 132
Starting Page 03053

Source: Directory of Open Access Journals (DOAJ)