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Author Yoen, Kyu Hyoek ♦ Song, Jin Dong ♦ Lee, Eun Hye ♦ Jang, Hye Joung ♦ Bae, Min Han ♦ Kim, Jun Young ♦ Han, Il Ki ♦ Choi, Won Jun
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ NANOSCIENCE AND NANOTECHNOLOGY ♦ ALUMINIUM COMPOUNDS ♦ ATOMIC FORCE MICROSCOPY ♦ CRYSTAL DEFECTS ♦ EMISSION SPECTRA ♦ EXCITATION ♦ FILMS ♦ GALLIUM ANTIMONIDES ♦ INTERFACES ♦ LAYERS ♦ MOLECULAR BEAM EPITAXY ♦ PHOTOLUMINESCENCE ♦ QUANTUM WELLS ♦ ROUGHNESS ♦ SILICON ♦ SUBSTRATES ♦ SUPERLATTICES ♦ SURFACE AREA ♦ TRANSMISSION ELECTRON MICROSCOPY
Abstract Highlights: • GaSb/Al{sub 0.33}GaSb MQW layer was grown on Si (1 0 0) by MBE. • The effect of miscut angle of Si substrate was studied. • A lot of twins were removed by Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers. • Good quality of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW layers were proved by PL spectra. • Optimum growth temperature of the AlSb buffer layer was studied. - Abstract: GaSb/Al{sub 0.33}Ga{sub 0.67}Sb multi-quantum well (MQW) film on n-Si (1 0 0) substrates is grown by molecular beam epitaxy. The effects of a miscut angle of the Si substrate (0°, 5°, and 7°) on the properties of an AlSb layer were also studied. The suppression of the anti-phase domains (APD) was observed at a miscut angle of 5° on Si (1 0 0). It was found that the growth temperature in the range of 510–670 °C affects the quality of AlSb layers on Si. Low root-mean-square surface (RMS) roughness values of 3–5 nm were measured by atomic force microscopy at growth temperatures ranging from 550 °C to 630 °C. In addition, Al{sub 0.66}Ga{sub 0.34}Sb/AlSb short period superlattice (SPS) layers were used to overcome problems associated with a large lattice mismatch. The RMS values of samples with a SPS were partially measured at approximately ∼1 nm, showing a larger APD surface area than samples without a SPS layer. Bright-field cross-sectional transmission electron microscopy images of the GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW, the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers show that numerous twins from the AlSb/Si interface were removed by the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS. The GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW PL spectra were obtained at 300 K and 10 K with a fixed excitation power of 103 mW. Emission peaks appeared at 1758 nm and 1620 nm, respectively.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2014-09-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 57


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