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Author Chen, Zhaoying ♦ Zheng, Xiantong ♦ Li, Zhilong ♦ Wang, Ping ♦ Rong, Xin ♦ Wang, Tao ♦ Yang, Xuelin ♦ Xu, Fujun ♦ Qin, Zhixin ♦ Ge, Weikun ♦ Shen, Bo ♦ Wang, Xinqiang
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DISLOCATIONS ♦ EFFICIENCY ♦ GALLIUM NITRIDES ♦ INDIUM NITRIDES ♦ PHOTOVOLTAIC EFFECT ♦ QUANTUM WELLS ♦ SAPPHIRE ♦ SEMICONDUCTOR MATERIALS ♦ SOLAR CELLS ♦ SUBSTRATES ♦ TEMPERATURE COEFFICIENT ♦ TEMPERATURE RANGE 0400-1000 K
Abstract We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-08
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 6


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