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Author Oh, Chadol ♦ Son, Junwoo ♦ Heo, Seungyang ♦ Jang, Hyun M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABUNDANCE ♦ DESIGN ♦ ELECTRONIC EQUIPMENT ♦ EPITAXY ♦ HYDROGENATION ♦ INTERFACES ♦ OXIDES ♦ PROTONS ♦ RESISTORS ♦ SENSITIVITY ♦ TRANSITION ELEMENTS
Abstract The electronic devices using correlated transition metal oxides are the promising candidates to overcome the limitation of the current electronics due to the rich electronic phases and the extreme sensitivities. Here, we report proton-based resistive switching memory that uses correlated oxides, i.e., epitaxial NdNiO{sub 3} heterostructure with asymmetrical concentration of protons (H{sup +}) to obtain multilevel states. By designing such metal-NdNiO{sub 3}-metal device structures with asymmetrical proton concentration, we demonstrate that the correlated oxides exhibit resistive switching by ionic transport of protons at the metal-hydrogenated NdNiO{sub 3} (H-NNO) interface. This finding will guide the development of energy-efficient switching devices for non-volatile memory and neuromorphic applications.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-21
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 12


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