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Author Choquette, K. D. ♦ Chow, W. W. ♦ Hagerott Crawford, M. ♦ Geib, K. M. ♦ Schneider, R. P. (Jr.)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ♦ SEMICONDUCTOR LASERS ♦ THRESHOLD CURRENT ♦ GALLIUM ARSENIDES ♦ ALUMINIUM ARSENIDES ♦ GAIN ♦ OXIDES ♦ LAYERS ♦ THRESHOLD VOLTAGE ♦ LASER DIODES ♦ QUANTUM WELLS
Abstract We report an experimental and theoretical analysis of the threshold properties of infrared oxide-confined vertical-cavity surface emitting lasers. We find good agreement between experiment and theory on the wavelength dependencies of the threshold current density and intrinsic voltage. The threshold voltage is shown to equal the sum of the calculated quasi-Fermi energy separation and the ohmic drop arising from a record low 17 to 30 {Omega} series resistance in these vertical-cavity lasers. Our analysis provides two independent means for determining the material threshold gain. A threshold gain of 500 cm{sup {minus}1} is found for these oxide-confined lasers, which is half that estimated for ion-implanted lasers with inferior electrical and optical confinement. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-06-01
Publisher Department Sandia National Laboratory
Publisher Place United States
Journal Applied Physics Letters
Volume Number 68
Issue Number 26
Organization Sandia National Laboratory


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