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Author Hsu, L. ♦ Walukiewicz, W.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ GALLIUM NITRIDES ♦ ELECTRON MOBILITY ♦ ALUMINIUM NITRIDES ♦ SEMICONDUCTOR MATERIALS ♦ HETEROJUNCTIONS ♦ CRYSTAL DOPING ♦ ELECTRONIC STRUCTURE ♦ SCATTERING ♦ PHONONS ♦ CHEMICAL COMPOSITION ♦ WAVE FUNCTIONS ♦ IMPURITIES ♦ ELECTRON GAS ♦ TWO-DIMENSIONAL CALCULATIONS
Abstract Theoretical electron mobility limits of a two-dimensional electron gas (2DEG) confined near the interface of a Al{sub x}Ga{sub 1{minus}x}N/GaN heterostructure are computed. The electronic structure of the 2DEG is calculated self-consistently to obtain the best analytic solution for the wave functions, and the results are used to compute the mobilities. All standard scattering mechanisms, including scattering by acoustic and optical phonons, remote and background impurities, and alloy disorder have been included in our calculations. Depending on the exact composition of the heterostructure, the low-temperature mobility may be limited by either Coulomb or alloy disorder scattering. Strategies for optimizing the mobility for various remote doping concentrations and spacer widths are discussed. Intrinsic mobilities in excess of 10{sup 6}cm{sup 2}/Vs are predicted for optimized heterostructures at low temperatures. {copyright} {ital 1997} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1997-07-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 56
Issue Number 3
Organization Lawrence Berkeley National Laboratory


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