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Author Tanaka, Shigeyasu ♦ Honda, Yoshio ♦ Sawaki, Nobuhiko ♦ Hibino, Michio
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DEFECTS ♦ DISLOCATIONS ♦ PHYSICS ♦ SUBSTRATES ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ VALLEYS ♦ VAPOR PHASE EPITAXY ♦ WINDOWS
Abstract Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO{sub 2} stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe windows were nominally 1 and 2 {mu}m, respectively. The average threading dislocation density for a completely coalesced 2-{mu}m-thick GaN crystal obtained on the [11{bar 2}]-oriented stripe-patterned substrate was {approx}2 x 10{sup 9} cm{sup -2}. The reduction in threading dislocation density is a consequence of the lateral growth and dislocation reactions at the coalesced front of the mask. On the other hand, valleys and pits tend to remain on the mask during the growth on the [1{bar 1}0]-oriented stripe-patterned substrate. Cracks were present in both crystals. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 7


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