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Author Raisky, O. Y. ♦ Wang, W. B. ♦ Alfano, R. R. ♦ Reynolds, C. L. (Jr.) ♦ Stampone, D. V. ♦ Focht, M. W.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ INDIUM COMPOUNDS ♦ GALLIUM COMPOUNDS ♦ PHOTOCONDUCTIVITY ♦ PHOTOVOLTAIC CELLS ♦ PHOTOCURRENTS ♦ RESONANCE ♦ INDIUM ARSENIDES ♦ GALLIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ PHOTODIODES ♦ HETEROJUNCTIONS ♦ TUNNEL EFFECT ♦ PHOTOLUMINESCENCE
Abstract Sequential resonant tunneling is proposed to enhance the photocurrent and reduce recombination losses in photovoltaic devices based on multiple-quantum-well (MQW) heterostructures. An InGaAsP/InP MQW {ital p{endash}i{endash}n} diode with built-in sequential resonant tunneling has been fabricated, and demonstrates an increase in the photocurrent and reduction in photoluminescence intensity. These effects are attributed to the resonance tunneling effect. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-01-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 1


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