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Author Zhang, L. ♦ De Gendt, S. ♦ Marneffe, J. -F. de ♦ Heylen, N. ♦ Murdoch, G. ♦ Tokei, Z. ♦ Boemmels, J. ♦ Baklanov, M. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DAMAGE ♦ DEPOSITION ♦ DEPOSITS ♦ DIELECTRIC MATERIALS ♦ METALS ♦ PERMITTIVITY ♦ POROUS MATERIALS ♦ SPIN
Abstract Cu/low-k integration by conventional damascene approach is becoming increasingly difficult as critical dimensions scale down. An alternative integration scheme is studied based on the replacement of a sacrificial template by ultralow-k dielectric. A metal structure is first formed by patterning a template material. After template removal, a k = 2.31 spin-on type of porous low-k dielectric is deposited onto the patterned metal lines. The chemical and electrical properties of spin-on dielectrics are studied on blanket wafers, indicating that during hard bake, most porogen is removed within few minutes, but 120 min are required to achieve the lowest k-value. The effective dielectric constant of the gap-fill low-k is investigated on a 45 nm ½ pitch Meander-Fork structure, leading to k{sub eff} below 2.4. The proposed approach solves the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous materials.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-31
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 9


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