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Author Mikheev, Evgeny ♦ Raghavan, Santosh ♦ Stemmer, Susanne
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIER DENSITY ♦ DESIGN ♦ DIELECTRIC MATERIALS ♦ INTERFACES ♦ LIQUIDS ♦ METALS ♦ PERMITTIVITY ♦ STRONTIUM TITANATES ♦ THICKNESS ♦ TWO-DIMENSIONAL SYSTEMS
Abstract Maximizing the effective dielectric constant of the gate dielectric stack is important for electrostatically controlling high carrier densities inherent to strongly correlated materials. SrTiO{sub 3} is uniquely suited for this purpose, given its extremely high dielectric constant, which can reach 10{sup 4}. Here, we present a systematic study of the thickness dependence of the dielectric response and leakage of SrTiO{sub 3} that is incorporated into a vertical structure on a high-carrier-density two-dimensional electron liquid (2DEL). A simple model can be used to interpret the data. The results show a need for improved interface control in the design of metal/SrTiO{sub 3}/2DEL devices.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-17
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 7


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