Thumbnail
Access Restriction
Open

Author Očenášek, Jan ♦ Voldřich, Josef
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ♦ ABSORPTION ♦ CRYSTAL STRUCTURE ♦ INELASTIC SCATTERING ♦ LASER RADIATION ♦ LASERS ♦ MONOCHROMATIC RADIATION ♦ RAMAN SPECTROSCOPY ♦ SILICON ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE MEASUREMENT ♦ VISIBLE RADIATION
Abstract Raman spectroscopy is a widely applied analytical technique with numerous applications that is based on inelastic scattering of monochromatic light, which is typically provided by a laser. Irradiation of a sample by a laser beam is always accompanied by an increase in the sample temperature, which may be unwanted or may be beneficial for studying temperature-related effects and determining thermal parameters. This work reports analyses of the temperature field induced by a Gaussian laser to calculate the Raman scattered intensity related to each temperature value of the nonuniform field present on the sample. The effective temperature of the probed field, calculated as an average weighted by the laser intensity, is demonstrated to be about 70% of the maximum temperature irrespective of the absorption coefficient or the laser focus. Finally, using crystalline silicon as a model material, it is shown that this effective value closely approximates the temperature value identified from the thermally related peak shift.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 23


Open content in new tab

   Open content in new tab