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Author Li, Changli ♦ Delaunay, Jean-Jacques ♦ Hisatomi, Takashi ♦ Watanabe, Osamu ♦ Domen, Kazunari ♦ Nakabayashi, Mamiko ♦ Shibata, Naoya
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BUFFERS ♦ CONNECTORS ♦ COPPER OXIDES ♦ ELECTROLYTES ♦ ELECTRON TRANSFER ♦ GALLIUM OXIDES ♦ LAYERS ♦ N-TYPE CONDUCTORS ♦ PHOTOCATHODES ♦ PHOTOCURRENTS ♦ SURFACES ♦ TITANIUM OXIDES
Abstract Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 3


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