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Author Bellaiche, L. ♦ Modine, N. A. ♦ Jones, E. D.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALLOYS ♦ DILUTE ALLOYS ♦ NITROGEN
Abstract The character of the lowest unoccupied state in the random Ga(As{sub 0.5-y}P{sub 0.5-y}N{sub 2y}) alloys is investigated for small nitrogen concentrations (0.1%<2y<1.0%) using a pseudopotential technique. As nitrogen is added to Ga(As{sub 0.5}P{sub 0.5}), this state evolves from an impurity localized level to a delocalized bandlike state. This evolution involves two processes. The first process is an anticrossing between the deep-gap nitrogen impurity level existing in the dilute alloy limit y{yields}0 and the {Gamma}{sub 1c}-like extended state of Ga(As{sub 0.5}P{sub 0.5}). The second process is the formation of an impurity subband due to the interaction of the deep-gap nitrogen levels. These two processes are expected to occur in any Ga(As{sub 1-x-y{sub 1}}P{sub x-y{sub 2}}N{sub y{sub 1}+y{sub 2}}) alloys for which x is larger than 0.3.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2000-12-15
Publisher Place United States
Journal Physical Review B
Volume Number 62
Issue Number 23


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