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Author Cho, C. R. ♦ Yarykin, N. ♦ Brown, R. A. ♦ Kononchuk, O. ♦ Rozgonyi, G. A. ♦ Zuhr, R. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ HELIUM ♦ GERMANIUM ♦ CARBON ♦ OXYGEN ♦ SILICON ♦ ION IMPLANTATION ♦ DEEP LEVEL TRANSIENT SPECTROSCOPY ♦ HELIUM IONS ♦ GERMANIUM IONS ♦ POINT DEFECTS ♦ IMPURITIES ♦ ANNEALING ♦ VACANCIES ♦ INTERSTITIALS ♦ CRYSTAL DEFECTS
Abstract {ital In situ} deep-level transient spectroscopy measurements have been carried out on {ital p}-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon{endash}oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200{endash}230 K in epitaxial wafers, and at 200{endash}300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon{endash}oxygen pair. The relative concentration of this defect is {approximately}10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in {ital n}-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 9


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