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Author Zhang, Qi ♦ Zhu, Jing ♦ Ren, Xiaowei ♦ Li, Hongwei ♦ Wang, Taihong
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ CHEMICAL ANALYSIS ♦ CHEMICAL COMPOSITION ♦ ELECTRON MICROSCOPY ♦ MOLECULAR BEAM EPITAXY ♦ TRANSMISSION ELECTRON MICROSCOPY
Abstract Vertically stacked In{sub x}Ga{sub 1{minus}x}As/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {l_brace}111{r_brace} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number. Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 24


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