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Author Kovchavtsev, A. P. ♦ Tsarenko, A. V. ♦ Guzev, A. A. ♦ Polovinkin, V. G. ♦ Nastovjak, A. E. ♦ Valisheva, N. A. ♦ Aksenov, M. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CAPACITANCE ♦ CAPACITORS ♦ DIELECTRIC MATERIALS ♦ INDIUM ARSENIDES ♦ INTERFACES ♦ LAYERS ♦ METALS ♦ OXIDES ♦ POISSON EQUATION ♦ QUANTIZATION ♦ SIMULATION ♦ SPACE CHARGE
Abstract The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 12


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