Thumbnail
Access Restriction
Open

Author Bauhuis, Gerard J. ♦ Mulder, Peter ♦ Haverkamp, Erik J. ♦ Schermer, John J. ♦ Nash, Lee J. ♦ Fulgoni, Dominic J. F. ♦ Ballard, Ian M. ♦ Duggan, Geoffrey
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ DOPED MATERIALS ♦ EPITAXY ♦ ETCHING ♦ FABRICATION ♦ GALLIUM ARSENIDE SOLAR CELLS ♦ GALLIUM ARSENIDES ♦ LAYERS ♦ SEMICONDUCTOR JUNCTIONS ♦ SEMICONDUCTOR MATERIALS ♦ THIN FILMS ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ CRYSTAL GROWTH METHODS ♦ DIRECT ENERGY CONVERTERS ♦ EQUIPMENT ♦ FILMS ♦ GALLIUM COMPOUNDS ♦ MATERIALS ♦ PHOTOELECTRIC CELLS ♦ PHOTOVOLTAIC CELLS ♦ PNICTIDES ♦ SOLAR CELLS ♦ SOLAR EQUIPMENT ♦ SURFACE FINISHING
Abstract The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-10-14
Publisher Place United States
Volume Number 1277
Issue Number 1


Open content in new tab

   Open content in new tab